首页>M470T2953BS3-CD5SLASHCC>规格书详情
M470T2953BS3-CD5SLASHCC中文资料三星数据手册PDF规格书
相关芯片规格书
更多- M470T2953BS3-CD5/CC
- M470T2953BS0-CD5SLASHCC
- M470T2953BS0-CD5/CC
- M470T2864QZH3
- M470T2864EH3
- M470T2864AZ3-CLE6SLASHD5SLASHCC
- M470T2864AZ3-CLE6/D5/CC
- M470T2863FB3
- M470T2863EH3
- M470L6524DU0-LCC
- M470L6524DU0-LB3
- M470L6524DU0-LB0
- M470L6524DU0-LA2
- M470L6524DU0-CCC
- M470L6524DU0-CB3
- M470L6524DU0-CB0
- M470L6524DU0-CA2
- M470L6524DU0
M470T2953BS3-CD5SLASHCC规格书详情
特性 Features
• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SMART |
三年内 |
1983 |
只做原装正品 |
询价 | |||
SAMSUNG/三星 |
2402+ |
8324 |
原装正品!实单价优! |
询价 | |||
MICROCHIP/微芯 |
22+ |
MSOP8 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
SAMSUNG |
24+ |
SODIMM |
35200 |
一级代理/放心采购 |
询价 | ||
SM |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
询价 | ||
SAMSUNG(三星半导体) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
Samsung |
21+ |
标准封装 |
5000 |
进口原装,订货渠道! |
询价 | ||
SAM |
24+ |
54860 |
原装现货假一罚十 |
询价 | |||
SAMSUNG/三星 |
24+ |
NA/ |
75 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ADM |
23+ |
DIP |
12000 |
全新原装假一赔十 |
询价 |


