DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 页数：20 Pages

SAMSUNG

三星