M464S0924DTS-C1L中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S0924DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sockets.

FEATURE

• Performance range

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ± 0.3V power supply

• MRS cycle with address key programs

Latency (Access from column address)

Burst length (1, 2, 4, 8 & Full page)

Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• Serial presence detect with EEPROM

• PCB : Height (1,000mil) , double sided component