丝印：M430F2101；Package：SOIC(DW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101；Package：SOIC(DW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101；Package：SOIC(DW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101；Package：SOIC(DW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101；Package：VQFN(RGE)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101；Package：VQFN(RGE)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101；Package：VQFN(RGE)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101；Package：VQFN(RGE)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101T；Package：SOIC(DW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器

丝印：M430F2101T；Package：SOIC(DW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 250 μA at 1 MHz, 2.2 V – Standby Mode: 0.7 μA – Off Mode (RAM Retention): 0.1 μA • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, 62.5-ns Instruction Cycle

文件：2.45162 Mbytes 页数：68 Pages

TI

德州仪器