M378B5273DH0中文资料三星数据手册PDF规格书

Key Features

• JEDEC standard 1.5V ± 0.075V Power Supply

• VDDQ = 1.5V ± 0.075V

• 400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, 933MHz fCK for 1866Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 6,7,8,9,10,11,13

• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock

• Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866)

• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]

• Bi-directional Differential Data Strobe

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C

• Asynchronous Reset