M36W432T85ZA6T集成电路（IC）的存储器规格书PDF中文资料

M36W432T85ZA6T属于集成电路（IC）的存储器。由意法半导体集团制造生产的M36W432T85ZA6T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

SUMMARY DESCRIPTION

The M36W432 is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDDF = 2.7V to 3.3V

– VDDS = VDDQF = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 70,85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W432T: 88BAh

– Bottom Device Code, M36W432B: 88BBh

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

– 8 x 4 KWord Parameter Blocks (Top or Bottom Location)

■ PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

SRAM

■ 4 Mbit (256K x 16 bit)

■ ACCESS TIME: 70ns

■ LOW VDDS DATA RETENTION: 1.5V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS