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M36W108

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108ismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■M36W108TandM36W108BarereplacedrespectivelybytheM36W108AT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB100ZM1T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB100ZM5T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB100ZM6T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB100ZN1T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB100ZN5T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB100ZN6T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB120ZM1T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB120ZM5T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB120ZM6T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB120ZN1T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB120ZN5T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AB120ZN6T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108ABZM

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108ABZN

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AT

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AT100ZM1T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AT100ZM5T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M36W108AT100ZM6T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

详细参数

  • 型号:

    M36W108

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

供应商型号品牌批号封装库存备注价格
ST
14+
300000
IC系列
询价
3000
公司存货
询价
ST
06+
?BGA
1000
全新原装 绝对有货
询价
ST
22+
BGA
2978
100%全新原装公司现货供应!随时可发货
询价
RENESAS
16+
QFP
2500
进口原装现货/价格优势!
询价
ST
23+
LBGA-48
5000
原装正品,假一罚十
询价
ST
23+
BGA
90000
一级代理商进口原装现货、假一罚十价格合理
询价
RENESAS
QFP
260
100%原装正品!现货热价热卖!可开17%增值税票!
询价
23+
N/A
90450
正品授权货源可靠
询价
RENESAS
23+
QFP
8230
全新原装真实库存含13点增值税票!
询价
更多M36W108供应商 更新时间2024-4-27 16:12:00