64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip Package: ● a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and ● a 32-Mbit Pseudo SRAM, the M69KB048BD. The purpose of this document is to describe how the two memory components operate with respect to

文件：429.42 Kbytes 页数：22 Pages

NUMONYX

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip Package: ● a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and ● a 32-Mbit Pseudo SRAM, the M69KB048BD. The purpose of this document is to describe how the two memory components operate with respect to

文件：223.86 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip Package: ● a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and ● a 32-Mbit Pseudo SRAM, the M69KB048BD. The purpose of this document is to describe how the two memory components operate with respect to

文件：429.42 Kbytes 页数：22 Pages

NUMONYX

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description The M36W0R6050T1 and M36W0R6050B1 combine two memories in a Multi-Chip Package: ● a 64-Mbit, Multiple Bank Flash memory, the M58WR064HT/B, and ● a 32-Mbit Pseudo SRAM, the M69KB048BD. The purpose of this document is to describe how the two memory components operate with respect to

文件：223.86 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体