M34F04数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The M34F04 is an electrically erasable programmable memory (EEPROM), organized as 512 x 8. The upper half (1FFh to 100h) of the memory array can be protected from inadvertent write operations by driving High the WCpin.

特性 Features

• Two-wire I2C serial interface supports
• 400 kHz protocol
• Single supply voltage
• 2.5 to 5.5 V
• Write control of the top half of memory (addresses 100h to 1FFh)
• Byte and Page Write (up to 16 Bytes)
• Random and Sequential Read modes
• Self-timed programming cycle
• Automatic address incrementing
• Enhanced ESD/latch-up behavior
• More than 1 million erase/write cycles
• More than 40 year data retention
• Package
• SO8 ECOPACK®2

简介

M34F04属于集成电路（IC）的存储器。由制造生产的M34F04存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。