M34C02-WMN6T集成电路（IC）的存储器规格书PDF中文资料

M34C02-WMN6T属于集成电路（IC）的存储器。由意法半导体集团制造生产的M34C02-WMN6T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

SUMMARY DESCRIPTION

The M34C02 is a 2 Kbit serial EEPROM memory able to lock permanently the data in its first half (from location 00h to 7Fh). This facility has been designed specifically for use in DRAM DIMMs (dual interline memory modules) with Serial Presence Detect. All the information concerning the DRAM module configuration (such as its access speed, its size, its organization) can be kept write protected in the first half of the memory.

FEATURES SUMMARY

■ Software Data Protection for lower 128 bytes

■ Two Wire I2C Serial Interface

■ 100kHz and 400kHz Transfer Rates

■ Single Supply Voltage:

– 2.5 to 5.5V up to 400kHz for M34C02-W

– 2.2 to 5.5V up to 400kHz for M34C02-L

– 1.8 to 5.5V up to 100kHz for M34C02-R

– 1.7 to 3.6V up to 100kHz for M34C02-F

■ BYTE and PAGE WRITE (up to 16 bytes)

■ RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Protection

■ More than 1 Million Erase/Write Cycles

■ More than 40 Year Data Retention