PST3455

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

PST3455

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

SE3455

InfraredSensorsLineGuide

FEATURES REFLECTIVESENSORS HOA1395. Features:Side-lookingplasticpackage •Phototransistoroutput •Infraredemitterandphototransistordetectorinasinglepackage •Lowprofilefordesignflexibility •Designedforshort-distancedetection •Enhancedsensitivity•Unfocusedforsensi

SE3455

InfraredSensorsLineGuide

SE3455

GaAsInfraredEmittingDiode

DESCRIPTION TheSE3455/5455seriesconsistsofagalliumarsenideinfraredemittingdiodemountedinaTO-46metalcanpackage.TheSE3455serieshasflatwindowcansprovidingawidebeamangle,whiletheSE5455serieshasglasslensedcansprovidinganarrowbeamangle.Thesedevicesareconstr

SI3455ADV

P-Channel30-V(D-S)MOSFET

SI3455DV

P-Channel30-V(D-S)MOSFET

SI3455DV

SingleP-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–3.6A,–30V. RDS(ON)=75mΩ@VGS=–10V RDS(ON)=125mΩ@VGS=–4.5V •Lowgatecharge

STT3455

P-ChannelEnhancementModePowerMos.FET

STT3455

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch