BM3G005MUV-LBE2

Marking：M3G005MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼NanoCapTMIntegrated5VLDO ◼WideOperatingRangeforVDDPinVoltage ◼WideOperatingRangeforINPinVoltage ◼LowVDDQuiescentandOperatingCurrent ◼LowPropagationDelay ◼Highdv/dtImmunity ◼AdjustableGateDriveStrength ◼PowerGoodSignalOutput ◼VDDUVLOProt

BM3G007MUV-LBE2

Marking：M3G007MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼NanoCapTMIntegratedOutputSelectable5VLDO ◼LongTimeSupportProductforIndustrialApplications ◼WideOperatingRangeforVDDPinVoltage ◼WideOperatingRangeforINPinVoltage ◼LowVDDQuiescentandOperatingCurrent ◼LowPropagationDelay ◼Highdv/dtImmunity ◼

BM3G015MUV-LBE2

Marking：M3G015MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼NanoCapTMIntegratedOutputSelectable5VLDO ◼LongTimeSupportProductforIndustrialApplications ◼WideOperatingRangeforVDDPinVoltage ◼WideOperatingRangeforINPinVoltage ◼LowVDDQuiescentandOperatingCurrent ◼LowPropagationDelay ◼Highdv/dtImmunity ◼

BM3G107MUV-LBE2

Marking：M3G107MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼NanoCapTMIntegrated5VLDO ◼WideOperatingRangeforVDDPinVoltage ◼WideOperatingRangeforINPinVoltage ◼LowVDDQuiescentandOperatingCurrent ◼LowPropagationDelay ◼Highdv/dtImmunity ◼AdjustableGateDriveStrength ◼PowerGoodSignalOutput ◼VDDUVLOProt

BM3G115MUV-LBE2

Marking：M3G115MUV；Package：VQFN046V8080；650 V GaN HEMT Power Stage

Features ◼NanoCapTMIntegrated5VLDO ◼WideOperatingRangeforVDDPinVoltage ◼WideOperatingRangeforINPinVoltage ◼LowVDDQuiescentandOperatingCurrent ◼LowPropagationDelay ◼Highdv/dtImmunity ◼AdjustableGateDriveStrength ◼PowerGoodSignalOutput ◼VDDUVLOProt

CPDT-36VUB-HF

Marking：M36；Package：SOT-23；SMD ESD Protection Diode

Features -Workingvoltages:3.3V~36V -Lowleakagecurrent. -Lowclampingvoltage. -IEC61000-4-2(ESD)±15kV(air),±8kV(contact). -IEC61000-4-4(EFT)40A(5/50ns). -Protectsonebidirectionallineortwo unidirectionallines. -350Wpeakpulsepowerper(tp=8/20μs).

DTB743XE

Marking：M33；Package：SOT-416；-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

Feature 1)VCE(sat)islowerthantheconventionalproducts. 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 3)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoall

DTB743XM

Marking：M33；Package：VMT3；-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

Feature 1)VCE(sat)islowerthantheconventionalproducts. 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 3)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoall

ESD36V23T-2A

Marking：M36；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 320~450WattsPeakPulsePowerperLine(tp=8/20μs) Protectsonebidirectionallineortwounidirectionallines Lowclampingvoltage Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±30kV(air),±30kV(contact):3.3V~15V IEC61000-4-2(ESD)±20kV(air),±20kV

ESD36V23TS-2A

Marking：M36；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 320~450WattsPeakPulsePowerperLine(tp=8/20μs) Protectsonebidirectionallineortwounidirectionallines LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2