256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

文件：690.97 Kbytes 页数：49 Pages

Mitsubishi

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very

文件：280.1 Kbytes 页数：49 Pages

Mitsubishi

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very

文件：280.1 Kbytes 页数：49 Pages

Mitsubishi

三菱电机

256M Synchronous DRAM

MITSUBISHI

三菱电机

256M Synchronous DRAM

MITSUBISHI

三菱电机

256M Synchronous DRAM

MITSUBISHI

三菱电机