256M Double Data Rate Synchronous DRAM

DESCRIPTION M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK

文件：824.58 Kbytes 页数：37 Pages

Mitsubishi

三菱电机

256M Double Data Rate Synchronous DRAM

文件：824.21 Kbytes 页数：37 Pages

Mitsubishi

三菱电机

256M Double Data Rate Synchronous DRAM

DESCRIPTION M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK

文件：824.58 Kbytes 页数：37 Pages

Mitsubishi

三菱电机

256M Double Data Rate Synchronous DRAM

DESCRIPTION M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK

文件：824.58 Kbytes 页数：37 Pages

Mitsubishi

三菱电机