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M29W800T90M1R中文资料意法半导体数据手册PDF规格书
M29W800T90M1R规格书详情
DESCRIPTION
The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
■ M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB
■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FASTACCESS TIME: 90ns
■ FAST PROGRAMMING TIME
– 10µs by Byte / 20µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATARETENTION
– Defectivity below 1ppm/year ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29W800T: 00D7h
– Device Code, M29W800B: 005Bh
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2023+ |
TSOP48 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ST |
03+ |
TSOP48 |
690 |
询价 | |||
ST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
ST |
05+ |
原厂原装 |
4516 |
只做全新原装真实现货供应 |
询价 | ||
ST |
19+ |
TSOP48 |
9350 |
进口原装现货 |
询价 | ||
ST |
2017+ |
NA |
28562 |
只做原装正品假一赔十! |
询价 | ||
ST |
2019 |
TSOP48 |
55000 |
专营原装正品现货 |
询价 | ||
PAN |
16+ |
SOT-163 |
10000 |
进口原装现货/价格优势! |
询价 | ||
ST/意法 |
23+ |
TSOP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ST |
23+ |
TSOP |
16900 |
正规渠道,只有原装! |
询价 |