Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory

文件：285.29 Kbytes 页数：15 Pages

NUMONYX

Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory

Micron

美光

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basisusing only a single2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally

文件：233.14 Kbytes 页数：33 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件：234.79 Kbytes 页数：33 Pages

STMICROELECTRONICS

意法半导体

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

文件：717.83 Kbytes 页数：40 Pages

STMICROELECTRONICS

意法半导体

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件：234.79 Kbytes 页数：33 Pages

STMICROELECTRONICS

意法半导体