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M29W800AB100M1T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

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M29W800AB100M5T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

M29W800AB100M6T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

M29W800AB100N1T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

M29W800AB100N5T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

M29W800AB100N6T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

M29W800AB100ZA1T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

M29W800AB100ZA5T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

M29W800AB100ZA6T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

M29W800AB120M1T

8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated int

文件:234.79 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

供应商型号品牌批号封装库存备注价格
STM
25+
SOP
1000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
STM
23+
SOP
8560
受权代理!全新原装现货特价热卖!
询价
STM
25+23+
SOP
27106
绝对原装正品全新进口深圳现货
询价
ST
23+
SOP
16900
正规渠道,只有原装!
询价
ST
22+
SOP
16900
支持样品,原装现货,提供技术支持!
询价
ST
25+
SOP
16900
原装,请咨询
询价
ST
2511
SOP
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
STM
00+
SOP
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SST
原厂封装
9800
原装进口公司现货假一赔百
询价
ST
25+
TSOP
4650
询价
更多M29W800AB1供应商 更新时间2025-11-6 16:08:00