M29W641DH10ZA6T中文资料意法半导体数据手册PDF规格书

SUMMARY DESCRIPTION

The M29W641D is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single, low voltage, 2.7V to 3.6V VCC supply for the circuitry and a 1.8V to 3.6V VCCQ supply for the Input/Output pins. An optional 12 V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V Core Power Supply

– VCCQ = 1.8V to 3.6V for Input/Output

– VPP =12 V for Fast Program (optional)

■ ACCESS TIME: 70, 90, 100 and 120ns

■ PROGRAMMING TIME

– 10 µs typical

– Double Word Program option

■ 128 UNIFORM, 32-KWord MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Program and Erase algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ WRITE PROTECT OPTIONS

– M29W641DH: WP Pin for Write Protection of Highest Address Block

– M29W641DL: WP Pin for Write Protection of Lowest Address Block

– M29W641DU: No Write Protection

■ TEMPORARY BLOCK UNPROTECTION MODE

■ COMMON FLASH INTERFACE

■ EXTENDED MEMORY BLOCK

– Extra block used as security block or to store additional information

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M29W641D: 22C7h