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M29W640DT90N1E

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90N1F

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90N1T

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90N6E

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90N6F

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90N6T

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90ZA1E

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90ZA1F

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90ZA1T

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

M29W640DT90ZA6E

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

文件:945.68 Kbytes 页数:49 Pages

STMICROELECTRONICS

意法半导体

供应商型号品牌批号封装库存备注价格
ST/意法
23+
TSOP56
50000
全新原装正品现货,支持订货
询价
ST
04+
TSOP48
1712
全新原装进口自己库存优势
询价
ST
25+
TSOP48
55
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
17+
TSOP48
9988
只做原装进口,自己库存
询价
STM
23+
NA
152
专做原装正品,假一罚百!
询价
ST
TSOP48
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
ST
23+
TSOP48
20000
全新原装假一赔十
询价
ST
2025+
TSOP48
3565
全新原厂原装产品、公司现货销售
询价
ST
23+24
TSSOP
29650
原装正品优势渠道价格合理.可开13%增值税发票
询价
ST/意法
2450+
TSSOP48
6540
只做原厂原装正品现货或订货!终端工厂可以申请样品!
询价
更多M29W640DT9供应商 更新时间2026-4-18 11:00:00