16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

SUMMARY DESCRIPTION The M29W160B is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件：170.65 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体