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型号	下载订购	功能描述	制造商上传企业	LOGO
M29W008T	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-100N1TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-100N5TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-100N6TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-120N1TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-120N5TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-120N6TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-150N1TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-150N5TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008T-150N6TR	文件：219.24 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi 文件：219.24 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M29W008T
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M29W008T	ST	24+	TSSOP40L	356		询价
深圳市豪迈兴电子有限公司	M29W008T	ST	24+	TSSOP40L	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市鹏和科技有限公司	M29W008T	ST	24+	TSSOP40L	5000	全现原装公司现货	询价
深圳市英卓尔科技有限公司	M29W008T	ST	20+	TSSOP40L	2960	诚信交易大量库存现货	询价
深圳市恒达亿科技有限公司	M29W008T	ST	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
贸泽芯城（深圳）电子科技有限公司	M29W008T	ST/意法	23+	TSSOP40L	7710	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市宏世佳电子科技有限公司	M29W008T	ST	2025+	TSSOP40	3565	全新原厂原装产品、公司现货销售	询价
深圳市中远芯科技有限公司	M29W008T	ST/意法	99+	TSSOP40L	306	原装现货	询价
深圳市联世界科技有限公司	M29W008T-120N6	ST	24+/25+		1500	原装正品现货库存价优	询价
深圳市弘为电子有限公司	M29W008T120N5	ST	24+	TSSOP-40	1088	原装现货假一罚十	询价

更多M29W008T供应商更新时间2025-10-6 15:30:00

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