M29W008AB规格书贸易商意法半导体-114ic电子网

首页 >M29W008AB>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
M29W008AB	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB100N1T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB100N5T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB100N6T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB120N1T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB120N5T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB120N6T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB80N1T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB80N5T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29W008AB80N6T	文件：218.01 Kbytes Page：30 Pages	8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W008A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The dev 文件：218.01 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M29W008AB
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M29W008AB-90N1		24+		3000	公司存货	询价
深圳市星佑电子有限公司	M29W008AB-120N6	STMICROELECT	05+	原厂原装	4309	只做全新原装真实现货供应	询价
深圳市益百分电子有限公司	M29W008AB90N1	ST		TSOP40	294	全新原装进口自己库存优势	询价
深圳市凌旭科技有限公司	M29W008AB120N6	STM	2016+	TSOP48	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海专毅电子科技有限公司	M29W008AB90N1	ST	17+	TSOP40	9988	只做原装进口,自己库存	询价
深圳市佳鑫美电子科技有限公司	M29W008AB120N6T	ST	25+	TSOP-40	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市华斯顿科技有限公司	M29W008AB-120N6	ST	25+23+	TSOP	20995	绝对原装正品全新进口深圳现货	询价
深圳市昊创电子有限公司	M29W008AB-120N6	ST	1824+	TSOP40	8041	原装现货专业代理,可以代拷程序	询价
深圳市赛芯源科技有限公司	M29W008AB-120N6	ST	2017+	LSOP40	5290	原装正品,诚信经营	询价
深圳市英卓尔科技有限公司	M29W008AB120N6T	ST	20+	TSOP	2960	诚信交易大量库存现货	询价

更多M29W008AB供应商更新时间2025-12-24 10:21:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号