4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

文件：222.68 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

文件：222.68 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory

DESCRIPTION The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devi

文件：222.68 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体