M29F400T规格书批发采购意法半导体第3页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M29F400T-55N1TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-55N3R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-55N3TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-55N6R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-55N6TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-70M1R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-70M1TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-70M3R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-70M3TR	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F400T-70M6R	文件：231.73 Kbytes Page：34 Pages	4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T 文件：231.73 Kbytes 页数：34 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M29F400T-90NI		24+		3000	公司存货	询价
深圳市益百分电子有限公司	M29F400T-90N1	ST	97+	TSOP48	3560	全新原装进口自己库存优势	询价
深圳市联世界科技有限公司	M29F400T-90N1	ST	24+/25+		91	原装正品现货库存价优	询价
深圳市恒创达实业有限公司	M29F400T-90N1		17+		6200	100%原装正品现货	询价
芯有半导体（深圳）有限公司	M29F400T-120M1	ST	05+	原厂原装	4251	只做全新原装真实现货供应	询价
深圳市欧立现代科技有限公司	M29F400T-90N1	ST	24+	SSOP	6980	原装现货,可开13%税票	询价
深圳市福田区绿盛电子商行	M29F400T-70N1	ST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市弘为电子有限公司	M29F400T120N1	ST	24+	原装正品	510	原装现货假一罚十	询价
深圳市鹏和科技有限公司	M29F400T-90N1	ST	24+	TSSOP	5000	只做原装公司现货	询价
上海专毅电子科技有限公司	M29F400T-90N1	ST	17+	TSOP48	9988	只做原装进口,自己库存	询价

更多M29F400T供应商更新时间2026-1-27 16:01:00

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