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M29F400T-90N1R中文资料PDF规格书
M29F400T-90N1R规格书详情
DESCRIPTION
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. The device
can also be programmed in standard program mers.
M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB
5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 55ns
FAST PROGRAMMING TIME
–10µs by Byte / 16µs by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29F400T: 00D5h
– Device Code, M29F400B: 00D6h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
3550 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ST |
2020+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST |
21+ |
TSSOP |
100 |
原装现货。假一赔十 |
询价 | ||
ST |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
ST |
23+ |
TSSOP |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
ST |
TSOP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法 |
23+ |
PLCC |
30000 |
百分百进口原装环保整盘 |
询价 | ||
ST/意法 |
2022 |
TSOP |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
询价 | ||
MOT |
23+ |
TSOP |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 |