M29F200T规格书批发采购意法半导体第4页-114ic电子网

首页 >M29F200T>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
M29F200T-70M6TR	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-70N1R	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-70N1TR	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-70N3R	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-70N3TR	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-70N6R	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-70N6TR	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-90M1R	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-90M1TR	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F200T-90M3R	文件：224.94 Kbytes Page：33 Pages	2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The d 文件：224.94 Kbytes 页数：33 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M29F200T
功能描述：
电可擦除可编程只读存储器 256Kx8 or 128Kx16 70
RoHS：
否
制造商：
Atmel
存储容量：
2 Kbit
组织：
256 B x 8
数据保留：
100 yr
最大时钟频率：
1000 KHz
最大工作电流：
6 uA
工作电源电压：
1.7 V to 5.5 V
最大工作温度：
+ 85 C
安装风格：
SMD/SMT
封装/箱体：
SOIC-8

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M29F200T-70N1		24+		3000	公司存货	询价
芯有半导体（深圳）有限公司	M29F200T-90M1TR	SGSTHOMSON	05+	原厂原装	4810	只做全新原装真实现货供应	询价
深圳市卓越微芯电子有限公司	M29F200T-90N1	ST	25+	TSOP	20	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市鹏和科技有限公司	M29F200T-90M1	ST	24+	SOP44	5000	只做原装公司现货	询价
深圳市华斯顿科技有限公司	M29F200T-90N1	ST	25+23+	TSOP	54830	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市英卓尔科技有限公司	M29F200T-90N1	ST	20+	TSOP	2960	诚信交易大量库存现货	询价
上海市鑫鸿达电子	M29F200T-90N1	ST	2022+		24	全新原装货期两周	询价
深圳市拓亿芯电子有限公司	M29F200T-90M1	ST	25+	SOP44	9800	全新原装现货,假一赔十	询价
深圳市威尔健半导体有限公司	M29F200T-90N1存储IC	ST/意法	23+	TSOP	50000	全新原装正品现货,支持订货	询价
标准国际(香港)有限公司	M29F200T-70N1	M29F200T-70N1	25+	38	38		询价

更多M29F200T供应商更新时间2026-1-22 14:02:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号