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M29F200B-120M1TR中文资料意法半导体数据手册PDF规格书
M29F200B-120M1TR规格书详情
DESCRIPTION
The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Word by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
■ 5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 55ns
■ FAST PROGRAMMING TIME
– 10µs by Byte / 16µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-byand Automatic Stand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATARETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29F200T: 00D3h
– Device Code, M29F200B: 00D4h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
561 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
STM |
99+ |
TSOP48 |
571 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
98 |
47 |
公司优势库存 热卖中!! |
询价 | |||
STM |
2016+ |
TSOP48 |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
STM |
TSOP48 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
ST |
23+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ST |
TSOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ST |
23+ |
TSOP |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
2022 |
TSOP48 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
STM |
2020+ |
TSOP48 |
10377 |
公司主营品牌,全新原装现货超低价! |
询价 |