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型号	下载订购	功能描述	制造商上传企业	LOGO
M29F100T-120N3TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120N6R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120N6TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120XM1R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120XM1TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120XM3R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120XM3TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120XM6R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120XM6TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100T-120XN1R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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详细参数

型号：
M29F100T
功能描述：
闪存 ALT 511-M29F100BT90M 128KX8 OR 64KX16 90N
RoHS：
否
制造商：
ON Semiconductor
数据总线宽度：
1 bit
存储类型：
Flash
存储容量：
2 MB
结构：
256 K x 8
接口类型：
SPI
电源电压-最大：
3.6 V
电源电压-最小：
2.3 V
最大工作电流：
15 mA
工作温度：
- 40 C to + 85 C
安装风格：
SMD/SMT
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	M29F100T-120N1	ST	1430+	SSOP	5800	全新原装,公司大量现货供应,绝对正品	询价
芯有半导体（深圳）有限公司	M29F100T-90N1	SGSTHOMSON	05+	原厂原装	4286	只做全新原装真实现货供应	询价
深圳市一线半导体有限公司	M29F100T-120M1	SGS-THOMSON	24+	SOP-44	99		询价
上海鑫科润电子科技有限公司	M29F100T-120M1	SGS-THOMSON	1998	SOP-44	99	原装现货海量库存欢迎咨询	询价
上海市鑫鸿达电子	M29F100T-90N1	ST	2022+		10	全新原装货期两周	询价
艾睿（深圳）半导体有限公司	M29F100T-90M1	ST	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	M29F100T-120M1	ST/意法	25+	SOP44	14	就找我吧!--邀您体验愉快问购元件!	询价
深圳市恒达亿科技有限公司	M29F100T-120M1	SGS-THOM	25+	SOP-44	4500	全新原装、诚信经营、公司现货销售!	询价
贸泽芯城（深圳）电子科技有限公司	M29F100T-120M1	ST/意法	23+	SOP44	7685	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市威雅利发展有限公司	M29F100T-90M1	ST	98+	/	3	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多M29F100T供应商更新时间2026-3-18 11:04:00

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