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型号	下载订购	功能描述	制造商上传企业	LOGO
M29F100-B120M6R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100B-120M6R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100-B120M6TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100B-120M6TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100-B120N1R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100B-120N1R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100-B120N1TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100B-120N1TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100-B120N3R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F100B-120N3R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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详细参数

型号：
M29F100
功能描述：
闪存 128Kx8 or 64Kx16 70n
RoHS：
否
制造商：
ON Semiconductor
数据总线宽度：
1 bit
存储类型：
Flash
存储容量：
2 MB
结构：
256 K x 8
接口类型：
SPI
电源电压-最大：
3.6 V
电源电压-最小：
2.3 V
最大工作电流：
15 mA
工作温度：
- 40 C to + 85 C
安装风格：
SMD/SMT
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	M29F100T-120N1	ST	1430+	SSOP	5800	全新原装,公司大量现货供应,绝对正品	询价
深圳市一线半导体有限公司	M29F100BT90M1		24+		3000	公司存货	询价
深圳市卓越微芯电子有限公司	M29F100BT90M1	STM	25+	SOP	240	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市欧立现代科技有限公司	M29F100B-70XN1	ST	24+		12	原装现货,可开13%税票	询价
深圳市星佑电子有限公司	M29F100BT90M1	STMICROELECT	05+	原厂原装	8190	只做全新原装真实现货供应	询价
深圳市利加科技有限公司	M29F100BT-90NL	st	16+	tsop	18	全新原装现货	询价
齐创科技(上海,北京,青岛)有限公司	M29F100BT90M1	ST	23+	SOP	5000	原装正品,假一罚十	询价
上海鑫科润电子科技有限公司	M29F100T-120M1	SGS-THOMSON	1998	SOP-44	99	原装现货海量库存欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	M29F100BT90M1	ST	25+	SOP44W	3629	原装优势!房间现货!欢迎来电!	询价
深圳市华斯顿科技有限公司	M29F100B-70XN1	ST	25+23+	TSSOP	23977	绝对原装正品现货,全新深圳原装进口现货	询价

更多M29F100供应商更新时间2025-10-4 11:03:00

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