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M29F100-B120M3TR中文资料PDF规格书
M29F100-B120M3TR规格书详情
DESCRIPTION
The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 70ns
■ FAST PROGRAMMING TIME
– 10µs by Byte / 16µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-byand Automatic Stand-by
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATARETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29F100T: 00D0h
– Device Code, M29F100B: 00D1h
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
22+23+ |
TSSOP |
23977 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
ST |
23+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ST |
SOP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
21+ |
SOP |
36520 |
一级代理/放心采购 |
询价 | ||
3000 |
公司存货 |
询价 | |||||
ST |
23+ |
TSOP-48 |
5000 |
原装正品,假一罚十 |
询价 | ||
ST/意法 |
21+ |
SO48 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
ST/意法 |
24+ |
SO48 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
22+ |
SO48 |
12120 |
只做进口原装现货库存 |
询价 | ||
ST/意法 |
2339+ |
SO48 |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 |