首页>M29F040B90N6T>规格书详情

M29F040B90N6T中文资料PDF规格书

M29F040B90N6T
厂商型号

M29F040B90N6T

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

文件大小

190.45 Kbytes

页面数量

21

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-6-22 20:00:00

M29F040B90N6T规格书详情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

产品属性

  • 型号:

    M29F040B90N6T

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
NA/
3301
原装现货,当天可交货,原型号开票
询价
ST/意法
24+
DIP
880000
明嘉莱只做原装正品现货
询价
ST
01+
DIP
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST/意法
23+
TSOP
90000
只做原厂渠道价格优势可提供技术支持
询价
ST/意法
2022
DIP
80000
原装现货,OEM渠道,欢迎咨询
询价
ST
DIP
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
22+23+
DIP
69164
绝对原装正品现货,全新深圳原装进口现货
询价
EON
2020+
DIP
16800
绝对原装进口现货,假一赔十,价格优势!
询价
ST/意法
DIP
265209
假一罚十原包原标签常备现货!
询价
ST
2020+
DIP
350000
100%进口原装正品公司现货库存
询价