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M29F040B70N6T中文资料意法半导体数据手册PDF规格书

M29F040B70N6T
厂商型号

M29F040B70N6T

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

文件大小

190.45 Kbytes

页面数量

21

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-9-24 22:50:00

M29F040B70N6T规格书详情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

产品属性

  • 型号:

    M29F040B70N6T

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
STM
23+
NA
8000
全新原装假一赔十
询价
ST
2020+
PLCC32
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST/意法
02+
DIP
880000
明嘉莱只做原装正品现货
询价
STM
2020+
PLCC
16800
绝对原装进口现货,假一赔十,价格优势!
询价
STM
2016+
PLCC32
6523
只做进口原装现货!假一赔十!
询价
ST/意法
22+
DIP
6000
进口原装 假一罚十 现货
询价
AMD
23+24
TSSOP
29650
原装正品优势渠道价格合理.可开13%增值税发票
询价
CHMC
23+
PLCC
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ST
21+
DIP
5000
全新原装现货 价格优势
询价
ST/意法
21+
PLCC
5000
原装现货/假一赔十/支持第三方检验
询价