首页>M29F040B70N3T>规格书详情

M29F040B70N3T中文资料意法半导体数据手册PDF规格书

PDF无图
厂商型号

M29F040B70N3T

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

文件大小

190.45 Kbytes

页面数量

21

生产厂商

STMICROELECTRONICS

中文名称

意法半导体

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-12 22:59:00

人工找货

M29F040B70N3T价格和库存,欢迎联系客服免费人工找货

M29F040B70N3T规格书详情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

产品属性

  • 型号:

    M29F040B70N3T

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
1235
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ST/意法
2402+
TSSOP
8324
原装正品!实单价优!
询价
SST
原厂封装
9800
原装进口公司现货假一赔百
询价
NUM
24+
12
询价
ST
2447
TSOP32
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST(意法)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
ST(意法)
23+
10000
只做全新原装,实单来
询价
ST
20+
TSOP32
2960
诚信交易大量库存现货
询价
STM
23+
SSOP
12800
公司只有原装 欢迎来电咨询。
询价
SGS
24+
原厂原装
5850
ELE优势库存国外货源
询价