M29F040-90K6TR数据手册原装现货意法半导体-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
M29F040-90K6TR	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F040-90K6R	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F160FT5AN6E2	文件：0 bytes Page：0 Pages	TSOP48	MICRON/美光上传：深圳庞田科技有限公司	MICRON/美光
M29F400BB-55M1内存芯片	文件：0 bytes Page：0 Pages	SOP	ST/意法上传：深圳和润天下电子科技有限公司	ST/意法
M29F400BT-70N1	文件：0 bytes Page：0 Pages	TSOP	ST/意法上传：深圳和润天下电子科技有限公司	ST/意法

更多M29F040-90K6TR供应商更新时间2026-2-2 13:30:00