M29F040-70XN5R中文资料意法半导体数据手册PDF规格书

厂商型号	M29F040-70XN5R
功能描述	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
文件大小	232.46 Kbytes
页面数量	31 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-27 22:59:00
人工找货	M29F040-70XN5R价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.

■ M29F040 is replaced by the M29F040B

■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

■ FAST ACCESS TIME: 70ns

■ BYTE PROGRAMMING TIME: 10µs typical

■ ERASE TIME

– Block: 1.0 sec typical

– Chip: 2.5 sec typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for

P/E.C. Status

■ MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

– Multiblock Erase

■ ERASE SUSPEND and RESUME MODES

■ LOW POWER CONSUMPTION

– Read mode: 8mA typical (at 12MHz)

– Stand-by mode: 25µA typical

– Automatic Stand-by mode

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h