2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b

文件：196.28 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b

文件：196.28 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b

文件：196.28 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b

文件：196.28 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b

文件：196.28 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b

文件：196.28 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b

文件：196.28 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体