M29DW640D90N6E中文资料意法半导体数据手册PDF规格书

厂商型号	M29DW640D90N6E
功能描述	64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
文件大小	945.88 Kbytes
页面数量	55 页
生产厂商	STMICROELECTRONICS
中文名称	意法半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2026-9-26 23:00:00
人工找货	M29DW640D90N6E价格和库存，欢迎联系客服免费人工找货

Family Overview

Densities from 32Mb to 64Mb

0.15µm process technology

Wide application area covered

technology shrink on going

higher densities

improved performances

Increased reliability

Main Features

M29DW323

32Mb (4Mbx8 / 2Mbx16), Boot Block

Access Time

70, 90ns

Supply Voltage

Vcc = 2.7V to 3.6V for Program, Erase and Read

Vpp = 12V for fast Program (optional)

Programming Time

10µs per Byte/Word typical

Double Word / Quadruple Byte Program

Low Power Consumption

Standby and Automatic Standby

Dual Operations:

Read in one bank or group of banks while Program or Erase in the other

型号：
M29DW640D90N6E
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
64 Mbit(8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory