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M29DW323DT70ZA6T中文资料意法半导体数据手册PDF规格书
M29DW323DT70ZA6T规格书详情
SUMMARY DESCRIPTION
The M29DW323D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its
Read mode.
FEATURES SUMMARY
■ SUPPLY VOLTAGE
–VCC = 2.7V to 3.6V for Program, Erase and Read
–VPP=12V for Fast Program (optional)
■ ACCESS TIME: 70ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
■ MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)
■ DUAL OPERATIONS
– Read in one bank while Program or Erase in other
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ VPP/WPPIN for FAST PROGRAM and WRITE PROTECT
■ TEMPORARY BLOCK UNPROTECTION MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ EXTENDED MEMORY BLOCK
– Extra block used as security block or to store additional information
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB: 225Fh
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STM |
24+ |
TSOP |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
STMicroelectronics |
2004 |
BGA |
7676 |
原装现货海量库存欢迎咨询 |
询价 | ||
ST |
23+ |
TFBGA48 |
28050 |
原装正品,假一罚十 |
询价 | ||
Micron |
17+ |
6200 |
询价 | ||||
STM |
23+ |
NA |
58098 |
专做原装正品,假一罚百! |
询价 | ||
STMicroelect |
24+ |
BGA |
2140 |
全新原装!现货特价供应 |
询价 | ||
Micron |
22+ |
48TFBGA (6x8) |
9000 |
原厂渠道,现货配单 |
询价 | ||
24+ |
BGAPB |
100 |
询价 | ||||
NA |
24+ |
18 |
原装现货假一赔十 |
询价 | |||
Micron |
1844+ |
TSOP48 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
询价 |