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M29DW128F60ZA6T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M29DW128F60ZA6T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M29DW128F60ZA6T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

NUMONYX

numonyx

M29DW128F60ZA6

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYX

numonyx

M29DW128F60ZA6

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M29DW128F60ZA6

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M29DW128F60ZA6E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M29DW128F60ZA6E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M29DW128F60ZA6E

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VsupplyFlashmemory

NUMONYX

numonyx

M29DW128F60ZA6F

128Mbit(16Mbx8or8Mbx16,MultipleBank,Page,BootBlock)3VSupply,FlashMemory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    M29DW128F60ZA6T

  • 制造商:

    NUMONYX

  • 制造商全称:

    Numonyx B.V

  • 功能描述:

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

供应商型号品牌批号封装库存备注价格
ST
22+
TSSOP
3000
原装正品,支持实单
询价
ST
2023+
TSSOP
5800
进口原装,现货热卖
询价
ST
20+
TSOP
2960
诚信交易大量库存现货
询价
ST
23+
SMD
8560
受权代理!全新原装现货特价热卖!
询价
ST
2025+
TSOP
3785
全新原厂原装产品、公司现货销售
询价
ST/PBF
23+
TSSOP
5000
原装正品,假一罚十
询价
ST
2447
TSOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST/PBF
23+
TSSOP
50000
全新原装正品现货,支持订货
询价
ST/意法
23+
TSOP
7685
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ST/PBF
0719+
TSSOP
446
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多M29DW128F60ZA6T供应商 更新时间2025-7-26 16:42:00