M295V100-T120N3TR技术资料参数批发供应-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
M295V100-T120N3TR	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V100-T120N3R	文件：207.88 Kbytes Page：30 Pages	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de 文件：207.88 Kbytes 页数：30 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128G60ZA6E	文件：0 bytes Page：0 Pages	BGA	MICRON/美光上传：深圳庞田科技有限公司	MICRON/美光
M29DW128G70NF6E	文件：0 bytes Page：0 Pages	BGA	MICRON/美光上传：深圳庞田科技有限公司	MICRON/美光
M29DW128G70NF6E	文件：0 bytes Page：0 Pages	TSOP56	MICRON/美光上传：深圳市明嘉莱科技有限公司	MICRON/美光

更多M295V100-T120N3TR供应商更新时间2025-12-24 11:20:00