M295V040-90XN6R资料使用说明书行情报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
M295V040-90XN6R	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M295V040-90XN6TR	文件：232.46 Kbytes Page：31 Pages	4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1 文件：232.46 Kbytes 页数：31 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128G60ZA6E	文件：0 bytes Page：0 Pages	BGA	MICRON/美光上传：深圳庞田科技有限公司	MICRON/美光
M29DW128G70NF6E	文件：0 bytes Page：0 Pages	BGA	MICRON/美光上传：深圳庞田科技有限公司	MICRON/美光
M29DW128G70NF6E	文件：0 bytes Page：0 Pages	TSOP56	MICRON/美光上传：深圳市明嘉莱科技有限公司	MICRON/美光

更多M295V040-90XN6R供应商更新时间2025-10-30 16:07:00