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M295V040-90K5R中文资料意法半导体数据手册PDF规格书
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DESCRIPTION
The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.
■ M29F040 is replaced by the M29F040B
■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 70ns
■ BYTE PROGRAMMING TIME: 10µs typical
■ ERASE TIME
– Block: 1.0 sec typical
– Chip: 2.5 sec typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Toggle bits Protocol for
P/E.C. Status
■ MEMORY ERASE in BLOCKS
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 25µA typical
– Automatic Stand-by mode
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E2h
产品属性
- 型号:
M295V040-90K5R
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
M |
24+ |
NA/ |
3297 |
原装现货,当天可交货,原型号开票 |
询价 | ||
Matsuo(松尾电机) |
24+ |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
MICROCHIP/微芯 |
22+ |
TO-220 |
20000 |
只做全新原装,假一罚十,支持BOM配单 |
询价 | ||
M |
2003 |
6 |
公司优势库存 热卖中!! |
询价 | |||
MICROCHIP/微芯 |
24+ |
18-DIP |
7671 |
原装正品.优势专营 |
询价 | ||
MNDSPEED |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
24+ |
3000 |
公司存货 |
询价 | ||||
MINDSPEED |
24+ |
BGA |
20 |
原装现货假一罚十 |
询价 | ||
MYRRA |
25+ |
N/A |
14185 |
原装现货17377264928微信同号 |
询价 | ||
TE |
20+ |
连接器 |
48 |
就找我吧!--邀您体验愉快问购元件! |
询价 |