4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte. ■ M29F040 is replaced by the M29F040B ■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1

文件：232.46 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体