64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An opt

文件：838.3 Kbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体