32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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意法半导体