32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V V

文件：1.02021 Mbytes 页数：55 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

文件：797.73 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

SUMMARY DESCRIPTION The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 2.7V to 3.6

文件：797.73 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体