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M28W160CT70N1T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N1T

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N1

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N1

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N1E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N1E

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N1F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N1F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N1S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N1S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N1U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N1U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

详细参数

  • 型号:

    M28W160CT70N1T

  • 功能描述:

    闪存 16M(1Mx16) 70ns

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 数据总线宽度:

    1 bit

  • 存储类型:

    Flash

  • 存储容量:

    2 MB

  • 结构:

    256 K x 8

  • 接口类型:

    SPI

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.3 V

  • 最大工作电流:

    15 mA

  • 工作温度:

    - 40 C to + 85 C

  • 安装风格:

    SMD/SMT

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
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TSOPPB
92
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16+
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10832
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05+
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1234
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23+
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20000
全新原装热卖/假一罚十!更多数量可订货
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10265
提供BOM表配单只做原装货值得信赖
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1822+
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9852
只做原装正品假一赔十为客户做到零风险!!
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22+
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2960
诚信交易大量库存现货
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2020+
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80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
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ST
20+
TSSOP
2960
诚信交易大量库存现货
询价
更多M28W160CT70N1T供应商 更新时间2024-5-16 10:02:00