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M28W160B-ZBT中文资料意法半导体数据手册PDF规格书

M28W160B-ZBT
厂商型号

M28W160B-ZBT

功能描述

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

文件大小

337.77 Kbytes

页面数量

45

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体集团官网

原厂标识
STMICROELECTRONICS
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-4 10:43:00

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M28W160B-ZBT规格书详情

SUMMARY DESCRIPTION

The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

The device features an asymmetrical blocked architecture. The M28W160B has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory address space while the M28W160BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 6, Block Addresses.

Parameter blocks 0 and 1 can be protected from accidental programming or erasure. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK PROTECTION on TWO PARAMETER BLOCKS

– WP for Block Protection

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W160BT: 90h

– Bottom Device Code, M28W160BB: 91h

供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
TSOP-48
89630
当天发货全新原装现货
询价
ST
09+
TSOP48
9434
只做原厂原装,认准宝芯创配单专家
询价
ST
05+
原厂原装
564
全新原装 绝对有货
询价
ST
24+
TSOP
48000
特价特价100原装长期供货.
询价
ST/意法
QQ咨询
TSOP
104
全新原装 研究所指定供货商
询价
ST
2021+
60000
原装现货,欢迎询价
询价
ST
23+
TSOP
4000
正品原装货价格低
询价
ST
2025+
TSSOP
3750
全新原厂原装产品、公司现货销售
询价
ST
20+
TSOP
2960
诚信交易大量库存现货
询价
ST
22+
TSSOP
3000
原装正品,支持实单
询价