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M28F256-12B1TR中文资料PDF规格书
M28F256-12B1TR规格书详情
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.
■ FAST ACCESS TIME: 90ns
■ LOW POWER CONSUMPTION
– Standby Current: 100µA Max
■ 10,000 ERASE/PROGRAM CYCLES
■ 12V PROGRAMMING VOLTAGE
■ TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM)
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ EXTENDED TEMPERATURE RANGES
产品属性
- 型号:
M28F256-12B1TR
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
512 Kbit(64Kb x8 Bulk Erase)Flasxh Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
11 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
2020+ |
DIP-32 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST |
22+ |
DIP-32 |
30000 |
原装正品 |
询价 | ||
ST |
DIP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
AMD |
2023+ |
DIP-24 |
57010 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||
ST/STMicroelectronics/意法半导 |
21+ |
DIP-32 |
45 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
08+ |
PLCC32 |
800 |
询价 | |||
AMD |
99+ |
DIP-24 |
45 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
AMD |
99+ |
DIP-24 |
45 |
只做原装,也只有原装! |
询价 | ||
ST |
2020+ |
DIP-32 |
45 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |