2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

2 Mb 256K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor in

文件：179.07 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体